High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
収録刊行物
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- IEEE Journal of Quantum Electronics
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IEEE Journal of Quantum Electronics 33 (12), 2266-2276, 1997
Institute of Electrical and Electronics Engineers (IEEE)
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キーワード
詳細情報 詳細情報について
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- CRID
- 1360574093706001664
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- DOI
- 10.1109/3.644109
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- ISSN
- 00189197
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- データソース種別
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- Crossref