ac Electrical Breakdown in Thin Silicon Oxide Films

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  • N. Klein
    Israel Institute of Technology, Haifa, Israel
  • N. Levanon
    Israel Institute of Technology, Haifa, Israel

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<jats:p>Silicon oxide capacitors were produced by vapor deposition in vacuum on glass slides. On the application of ac voltages in the frequency range 10 to 50 000 cps, single-hole breakdown, propagating breakdown, and maximum voltage breakdown events were observed. The processes in these breakdown events and the destruction were analogous to those occurring on dc. However, the peak value of the ac maximum dielectric strength, Fam, was found to be 10%–20% larger than the dc maximum dielectric strength Fdm; this is in contrast with the much larger dc strength found for thick insulations. Good agreement was found between observations and between calculated values of Fam and Fam/Fdm. Fam of the samples tested ranged from 1.75 to 6.9 MV/cm. Above 1−10 kc/sec, Fam decreased quasilinearly with frequency due to dielectric loss. At frequencies &lt;10 cps, Fam decreased, probably due to temperature ripple. A small decrease in Fam is also caused by large series resistors.</jats:p>

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