Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy

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Journal

Journal of Crystal Growth

Journal of Crystal Growth 34 (1), 132-138, 1976-06

Elsevier BV

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CRID

1360576122702507520
DOI

10.1016/0022-0248(76)90271-2
ISSN

00220248
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https://api.elsevier.com/content/article/PII:0022024876902712?httpAccept=text/xml

https://api.elsevier.com/content/article/PII:0022024876902712?httpAccept=text/plain
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