Dithieno[3,2‐b:2′,3′‐d]pyrrole Cored p‐Type Semiconductors Enabling 20 % Efficiency Dopant‐Free Perovskite Solar Cells
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- Jie Zhou
- School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
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- Xinxing Yin
- School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
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- Zihao Dong
- School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
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- Amjad Ali
- School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
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- Zhaoning Song
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
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- Niraj Shrestha
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
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- Sandip Singh Bista
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
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- Qinye Bao
- Key Laboratory of Polar Materials and Devices Department of Optoelectronics East China Normal University Shanghai 200241 China
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- Randy J. Ellingson
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
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- Yanfa Yan
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
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- Weihua Tang
- School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
説明
<jats:title>Abstract</jats:title><jats:p>Organic p‐type semiconductors with tunable structures offer great opportunities for hybrid perovskite solar cells (PVSCs). We report herein two dithieno[3,2‐b:2′,3′‐d]pyrrole (DTP) cored molecular semiconductors prepared through π‐conjugation extension and an N‐alkylation strategy. The as‐prepared conjugated molecules exhibit a highest occupied molecular orbital (HOMO) level of −4.82 eV and a hole mobility up to 2.16×10<jats:sup>−4</jats:sup> cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>. Together with excellent film‐forming and over 99 % photoluminescence quenching efficiency on perovskite, the DTP based semiconductors work efficiently as hole‐transporting materials (HTMs) for n‐i‐p structured PVSCs. Their dopant‐free MA<jats:sub>0.7</jats:sub>FA<jats:sub>0.3</jats:sub>PbI<jats:sub>2.85</jats:sub>Br<jats:sub>0.15</jats:sub> devices exhibit a power conversion efficiency over 20 %, representing one of the highest values for un‐doped molecular HTMs based PVSCs. This work demonstrates the great potential of using a DTP core in designing efficient semiconductors for dopant‐free PVSCs.</jats:p>
収録刊行物
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- Angewandte Chemie International Edition
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Angewandte Chemie International Edition 58 (39), 13717-13721, 2019-08-19
Wiley
