Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

DOI PDF 2 Citations

Journal

2017 IEEE International Electron Devices Meeting (IEDM)

2017 IEEE International Electron Devices Meeting (IEDM) 32.4.1-32.4.4, 2017-12

IEEE

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Details 詳細情報について

CRID

1360579815763458176
DOI

10.1109/iedm.2017.8268486
Web Site

http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268486.pdf?arnumber=8268486
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