A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-<i>V</i> _MIN Applications

Details 詳細情報について

• CRID

  1360579820066611968

• DOI

  10.1109/jssc.2020.3034241

• ISSN

  1558173X

  00189200

• Web Site

  http://xplorestaging.ieee.org/ielx7/4/9306027/09290031.pdf?arnumber=9290031

• Data Source

  • Crossref