Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films

DOI Web Site 被引用文献1件
  • Dujiao Zhang
    State Key Laboratory of Electrical Insulation and Power Equipment
  • Feihong Wu
    State Key Laboratory of Electrical Insulation and Power Equipment
  • Qi Ying
    State Key Laboratory of Electrical Insulation and Power Equipment
  • Xinyu Gao
    State Key Laboratory of Electrical Insulation and Power Equipment
  • Nan Li
    State Key Laboratory of Electrical Insulation and Power Equipment
  • Kejing Wang
    State Key Laboratory of Electrical Insulation and Power Equipment
  • Zongyou Yin
    Research School of Chemistry
  • Yonghong Cheng
    State Key Laboratory of Electrical Insulation and Power Equipment
  • Guodong Meng
    State Key Laboratory of Electrical Insulation and Power Equipment

説明

<p>A thickness-tunable, ultra-large, continuous and high-dielectric h-BN films, achieved by optimizing LPCVD growth parameters, exhibit highly promising perspectives to develop electrically reliable 2D microelectronics with an ultrathin feature.</p>

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