MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3
書誌事項
- 公開日
- 2021-06
- 権利情報
-
- https://www.elsevier.com/tdm/userlicense/1.0/
- https://www.elsevier.com/legal/tdmrep-license
- http://creativecommons.org/licenses/by/4.0/
- DOI
-
- 10.1016/j.rinp.2021.104167
- 公開者
- Elsevier BV
この論文をさがす
収録刊行物
-
- Results in Physics
-
Results in Physics 25 104167-, 2021-06
Elsevier BV
