High‐Performance Wafer‐Scale MoS₂ Transistors toward Practical Application

<jats:title>Abstract</jats:title><jats:p>Atomic thin transition‐metal dichalcogenides (TMDs) are considered as an emerging platform to build next‐generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS<jats:sub>2</jats:sub> islands to improve device performance is proposed. A four‐probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML‐MoS<jats:sub>2</jats:sub> islands. Based on such continuous MoS<jats:sub>2</jats:sub> films synthesized on a 2 in. insulating substrate, a top‐gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (<jats:italic>V</jats:italic> <jats:sub>T</jats:sub>) and field effect mobility (μ<jats:sub>FE</jats:sub>) for hundreds of MoS<jats:sub>2</jats:sub> FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μ<jats:sub>FE</jats:sub> of 70 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> and subthreshold swing of about 150 mV dec<jats:sup>−1</jats:sup> are extracted from these MoS<jats:sub>2</jats:sub> FETs, which are comparable to the best top‐gated MoS<jats:sub>2</jats:sub> FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D‐TMDs into functional systems and paves the way for the future development of 2D‐TMDs integrated circuits.</jats:p>