Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures
抄録
<jats:p> The self-consistent variational technique is used to calculate the mobility of two-dimensional electrons at the hetero-in-terfaces in AlInAs/InGaAs and InP/InGaAs single heterostructures. The sheet electron concentration dependence of the total mobility and each-scattering-limited mobility are shown. The predominance of the alloy-scattering-limited mobility is demonstrated. Model calculation of the two-dimensional electron mobility in an alloy-scattering-free InAs/GaAs monolayer superlattice with AlInAs as the barrier is also presented. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 24 (10R), 1307-, 1985-10-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871768429824
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- NII論文ID
- 210000023785
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- ISSN
- 13474065
- 00214922
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- データソース種別
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