Impact of inserted Ta ultrathin layer and postdeposition annealing on the forming voltage of Ir/Ti/Ta/HfO₂/TiN/Ti/SiO₂/Si resistive switching devices

Details 詳細情報について

• CRID

  1360847874819992064

• NII Article ID

  210000144986

• DOI

  10.7567/jjap.54.04dd10

• ISSN

  13474065

  00214922

• Web Site

  http://stacks.iop.org/1347-4065/54/i=4S/a=04DD10/pdf

  http://stacks.iop.org/1347-4065/54/i=4S/a=04DD10?key=crossref.335e6c2c139890789ad45878bc7b5ff5

• Data Source

  • Crossref
  • CiNii Articles
  • KAKEN