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Impact of inserted Ta ultrathin layer and postdeposition annealing on the forming voltage of Ir/Ti/Ta/HfO<sub>2</sub>/TiN/Ti/SiO<sub>2</sub>/Si resistive switching devices
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 54 (4S), 04DD10-, 2015-03-19
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360847874819992064
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- NII Article ID
- 210000144986
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- ISSN
- 13474065
- 00214922
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- Article Type
- journal article
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN
