Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

DOI PDF 24 References
  • W. He
    Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics 1 , Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China
  • S. L. Lu
    Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics 1 , Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China
  • D. S. Jiang
    Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083, People’s Republic of China
  • J. R. Dong
    Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics 1 , Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China
  • A. Tackeuchi
    4Department of Physics, Waseda University, Tokyo 169-8555, Japan
  • H. Yang
    Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics 1 , Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China

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<jats:p>Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge(Ga,In)-V(Ga,In)] complexes. A strong evidence to support the existence of [Ge(Ga,In)-Si(Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge(Ga,In)-V(Ga,In)] and [Ge(Ga,In)-Si(Ga,In)] complexes.</jats:p>

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