Ballistic Transport Exceeding 28 μm in CVD Grown Graphene

DOI DOI HANDLE Web Site PubMed 22 Citations Open Access
  • Luca Banszerus
    JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
  • Michael Schmitz
    JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
  • Stephan Engels
    JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
  • Matthias Goldsche
    JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
  • Kenji Watanabe
    National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
  • Takashi Taniguchi
    National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
  • Bernd Beschoten
    JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
  • Christoph Stampfer
    JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany

Description

We report on ballistic transport over more than 28 ��m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 ��m up to 200 K.

13 pages, 3 figures

Journal

  • Nano Letters

    Nano Letters 16 (2), 1387-1391, 2016-01-15

    American Chemical Society (ACS)

Citations (22)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top