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- Luca Banszerus
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
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- Michael Schmitz
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
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- Stephan Engels
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
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- Matthias Goldsche
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
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- Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
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- Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
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- Bernd Beschoten
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
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- Christoph Stampfer
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
説明
We report on ballistic transport over more than 28 ��m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 ��m up to 200 K.
13 pages, 3 figures
収録刊行物
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- Nano Letters
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Nano Letters 16 (2), 1387-1391, 2016-01-15
American Chemical Society (ACS)
