Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

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  • E. P. Donovan
    Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
  • F. Spaepen
    Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
  • D. Turnbull
    Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
  • J. M. Poate
    AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • D. C. Jacobson
    AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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<jats:p>Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV implantation energies resulted in amorphous layers of micron thickness whose areal densities were determined using the Rutherford backscattering and channeling of 1-MeV protons. These techniques allow determination of the amorphous-crystal interface velocity (which is proportional to the rate of heat evolution ΔḢac) and the total enthalpy of crystallization ΔHac. Amorphous Ge was found to relax continuously to an amorphous state of lower free energy, with a total enthalpy of relaxation of 6.0 kJ/mol before the onset of rapid crystallization. The interface velocity for crystallization on (100) substrates, was found to have an Arrhenius form with an activation energy of 2.17 eV. The value of ΔHac was found to be 11.6±0.7 kJ/mol, the same as for samples prepared by deposition. For Si, ΔHac was determined to be 11.9±0.7 kJ/mol without any evidence of heat release due to relaxation. The (100) interface velocity was found to have an activation energy of 2.24 eV. The effects of the implant depth profile on the regrowth velocity could also be observed directly in the DSC signal. From the value of ΔHac and Gibbs free-energy calculations, the melting temperature of amorphous Si has been determined to be Taℓ =1420 K.</jats:p>

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