High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

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  • B. Lambert
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
  • Y. Toudic
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
  • Y. Rouillard
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
  • M. Baudet
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
  • B. Guenais
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
  • B. Deveaud
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
  • I. Valiente
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
  • J. C. Simon
    France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France

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説明

<jats:p>We report the molecular beam epitaxy growth of (Al)GaSb/AlSb Bragg mirrors around the 1.55 μm wavelength region. Mirrors with 97% reflectivity have been achieved by using 10 pairs of (Al)GaSb (1048 Å) and AlSb (1207 Å) quarter wavelength layers. This demonstrates the capability of the antimonide system to obtain efficient Bragg mirrors grown on GaAs substrates.</jats:p>

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