GaInAsP/InP avalanche photodiodes

C. E. Hurwitz, J. J. Hsieh

doi:10.1063/1.90095

GaInAsP/InP avalanche photodiodes

DOI PDF 被引用文献1件

C. E. Hurwitz

Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
J. J. Hsieh

Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173

説明

<jats:p>Avalanche photodiodes for detection at 0.9–1.2 μm have been successfully fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in excess of 12, rise times of 150 psec or less, and low-bias quantum efficiencies of 45% have been measured.</jats:p>