A combined plasma-surface model for the deposition of C:H films from a methane plasma

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  • A. von Keudell
    Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching, Germany
  • W. Möller
    Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching, Germany

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<jats:p>The deposition of C:H layers by an electron-cyclotron-resonance plasma from methane was investigated. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology, and structure were investigated by high-energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin-film deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH3, the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favorably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.</jats:p>

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