Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor
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- Kosuke Matsuzaki
- Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Kenji Nomura
- Tokyo Institute of Technology 2 ERATO-SORST, Japan Science and Technology Agency (JST), Frontier Research Center, , Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Hiroshi Yanagi
- Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Toshio Kamiya
- Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Masahiro Hirano
- Tokyo Institute of Technology 2 ERATO-SORST, Japan Science and Technology Agency (JST), Frontier Research Center, , Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Hideo Hosono
- Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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説明
<jats:p>Cu 2 O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities ∼90 cm2 V−1 s−1 comparable to those of single crystals (∼100 cm2 V−1 s−1). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (∼0.26 cm2 V−1 s−1 and ∼6, respectively).</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 93 (20), 202107-, 2008-11-17
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1361137045089253248
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- ISSN
- 10773118
- 00036951
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- データソース種別
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