A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical Effects
Journal
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- IEEE Transactions on Electron Devices
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IEEE Transactions on Electron Devices 58 (7), 1830-1836, 2011-07
Institute of Electrical and Electronics Engineers (IEEE)
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Details 詳細情報について
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- CRID
- 1361418519337197056
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- ISSN
- 15579646
- 00189383
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- Data Source
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- Crossref