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Predicting synergy in atomic layer etching
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- Keren J. Kanarik
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Samantha Tan
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Wenbing Yang
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Taeseung Kim
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Thorsten Lill
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Alexander Kabansky
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Eric A. Hudson
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Tomihito Ohba
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Kazuo Nojiri
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Jengyi Yu
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Rich Wise
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Ivan L. Berry
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Yang Pan
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Jeffrey Marks
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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- Richard A. Gottscho
- Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
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Description
<jats:p>Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters [J. Appl. Phys. 50, 5 (1979)]. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. They conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.</jats:p>
Journal
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- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (5), 05C302-, 2017-03-27
American Vacuum Society
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Details 詳細情報について
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- CRID
- 1361418519970424960
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- ISSN
- 15208559
- 07342101
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- Data Source
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- Crossref