Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C
説明
<jats:title>Abstract</jats:title><jats:p>The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is studied in a periodic mesoporous oxide (PMO) with ∼34 % porosity and k-value ∼2.3. At a partial pressure of 3 mT, the onset of micro-capillary condensation occurs around +20 °C and the low-k matrix is filled at −20 °C. The condensed phase shows high stability from −50 < T ≤−35 °C, and persists in the pores when the low-k is exposed to a SF<jats:sub>6</jats:sub>-based plasma discharge. The etching properties of a SF<jats:sub>6</jats:sub>-based 150W-biased plasma discharge, using as additive this new HBPO gas, shows that negligible damage can be achieved at −50 °C, with acceptable etch rates. The evolution of the damage depth as a function of time was studied without bias and indicates that Si-CH<jats:sub>3</jats:sub> loss occurs principally through Si-C dissociation by VUV photons.</jats:p>
収録刊行物
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- Scientific Reports
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Scientific Reports 8 (1), 2018-01-30
Springer Science and Business Media LLC
