Observation of transition metals at shunt locations in multicrystalline silicon solar cells
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- T. Buonassisi
- Lawrence Berkeley National Laboratory, University of California, MS 62-203, 1 Cyclotron Road, Berkeley, California 94720
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- O. F. Vyvenko
- Lawrence Berkeley National Laboratory, University of California, MS 62-203, 1 Cyclotron Road, Berkeley, California 94720
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- A. A. Istratov
- Lawrence Berkeley National Laboratory, University of California, MS 62-203, 1 Cyclotron Road, Berkeley, California 94720
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- E. R. Weber
- Lawrence Berkeley National Laboratory, University of California, MS 62-203, 1 Cyclotron Road, Berkeley, California 94720
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- G. Hahn
- University of Konstanz, Department of Physics, P.O. Box X916, 78457 Konstanz, Germany
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- D. Sontag
- University of Konstanz, Department of Physics, P.O. Box X916, 78457 Konstanz, Germany
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- J. P. Rakotoniaina
- Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
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- O. Breitenstein
- Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
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- J. Isenberg
- Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, D-79110 Freiburg, Germany
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- R. Schindler
- Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, D-79110 Freiburg, Germany
説明
<jats:p>By employing a combination of analytical tools including lock-in thermography and synchrotron-based x-ray fluorescence microscopy, transition metals have been identified at shunting locations in two types of low-cost multicrystalline silicon (mc-Si) solar cell materials: cast multicrystalline and ribbon growth on substrate (RGS). At a shunting location in the cast mc-Si cell, silver and titanium, both contact strip materials, have been identified at the shunting location, suggesting a process-induced error related to contact metallization. At a shunting location in the RGS cell, a material-specific shunting mechanism is described, involving channels of inverse conductivity type, where copper and iron are found. The possible roles of these metals in this shunting mechanism are discussed. These results illustrate the wide range of physical mechanisms involved with shunting in solar cells.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 95 (3), 1556-1561, 2004-02-01
AIP Publishing