A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC
書誌事項
- 公開日
- 2017-01
- 権利情報
-
- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
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- 10.1109/tpel.2016.2524024
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Transactions on Power Electronics
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IEEE Transactions on Power Electronics 32 (1), 551-560, 2017-01
Institute of Electrical and Electronics Engineers (IEEE)
