Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism
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- Ming-Chi Wu
- National Chiao Tung University Department of Electronics Engineering and Institute of Electronics, , Hsinchu 300, Taiwan
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- Tsung-Han Wu
- National Chiao Tung University Department of Electronics Engineering and Institute of Electronics, , Hsinchu 300, Taiwan
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- Tseung-Yuen Tseng
- National Chiao Tung University Department of Electronics Engineering and Institute of Electronics, , Hsinchu 300, Taiwan
書誌事項
- 公開日
- 2012-01-01
- DOI
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- 10.1063/1.3674322
- 公開者
- AIP Publishing
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説明
<jats:p>The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO2 thin film after the memory device is annealed at 600 °C in N2 ambient for 60 s without any chemical reaction between Co and ZrO2, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of −1.5∼−2.8 V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of −1.1∼−1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 111 (1), 014505-, 2012-01-01
AIP Publishing
