Structure and Morphology of PDI8‐CN2 for n‐Type Thin‐Film Transistors

書誌事項

公開日
2011-12-20
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/adfm.201101640
公開者
Wiley

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説明

<jats:title>Abstract</jats:title><jats:p>A multiscale investigation of <jats:italic>N</jats:italic>,<jats:italic>N</jats:italic>′‐bis(<jats:italic>n</jats:italic>‐octyl)‐<jats:italic>x</jats:italic>:<jats:italic>y</jats:italic>, dicyanoperylene‐3,4:9,10‐bis(dicarboximide), PDI8‐CN2, shows the same molecular arrangement in the bulk and in thin films sublimated on SiO<jats:sub>2</jats:sub>/Si wafers. Non‐conventional powder diffraction methods and theoretical calculations concur to provide a coherent picture of the crystalline structure. X‐ray diffraction (XRD) and atomic force microscopy (AFM) analyses of films of different thickness deposited at different substrate temperatures indicate the existence of two temperature‐dependent deposition regimes: a low‐temperature (room temperature) regime and a high‐temperature (80–120 °C) one, each characterized by different growth mechanisms. These mechanisms eventually result in different morphological and structural features of the films, which appear to be highly correlated with the trend of the electrical parameters that are measured in PDI8‐CN2‐based field‐effect transistors.</jats:p>

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