Optically pumped laser action in double-heterostructure HgCdTe grown by metalorganic chemical vapor deposition on a CdTe substrate

DOI PDF 被引用文献3件
  • A. Ravid
    Solid State Physics Department, Soreq Nuclear Research Centre, Yavne 70600, Israel
  • G. Cinader
    Solid State Physics Department, Soreq Nuclear Research Centre, Yavne 70600, Israel
  • A. Zussman
    Solid State Physics Department, Soreq Nuclear Research Centre, Yavne 70600, Israel

書誌事項

公開日
1993-07-01
DOI
  • 10.1063/1.354133
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>Photopumped laser action in a HgCdTe double-heterostructure grown by metalorganic chemical vapor deposition on a CdTe substrate containing (311)- and (211)-oriented grains was studied. The (311)-oriented device exhibited laser action around λ=4 μm with a threshold power increasing exponentially from 56 mW at T=12 K to 2.8 W at the highest lasing temperature of 90 K. The (211)-oriented laser device emitted around 2.5 μm. The threshold power of the (211) device was much higher than that of the (311) one (1.5 W at 12 K) and increased with temperature at a lower rate to 4.8 W at the highest lasing temperature of 110 K. Front illumination photoluminescence from both active and cladding layers of the (311)-oriented heterostructure was studied as a function of temperature.</jats:p>

収録刊行物

被引用文献 (3)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ