Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

DOI Web Site Web Site 2 Citations

Journal

Microelectronics Journal

Microelectronics Journal 34 (10), 969-974, 2003-10

Elsevier BV

Citations (2)*help

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Keywords

General Engineering

Details 詳細情報について

CRID

1361699994047100544
DOI

10.1016/s0026-2692(03)00183-6
ISSN

00262692
Web Site

https://api.elsevier.com/content/article/PII:S0026269203001836?httpAccept=text/xml

https://api.elsevier.com/content/article/PII:S0026269203001836?httpAccept=text/plain
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