Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics

DOI Web Site Web Site 被引用文献1件
  • Nicholas R. Glavin
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Christopher Muratore
    University of Dayton Dayton OH 45409 USA
  • Michael L. Jespersen
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Jianjun Hu
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Phillip T. Hagerty
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Al M. Hilton
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Austin T. Blake
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Christopher A. Grabowski
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Michael F. Durstock
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Michael E. McConney
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Drew M. Hilgefort
    Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson AFB OH 45433 USA
  • Timothy S. Fisher
    School of Mechanical Engineering and Birck Nanotechnology Center Purdue University West Lafayette IN 47907 USA
  • Andrey A. Voevodin
    Materials Science and Engineering University of North Texas Denton TX 76203 USA

書誌事項

公開日
2016-03-21
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/adfm.201505455
公開者
Wiley

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説明

<jats:p>Next‐generation nanoelectronics based on 2D materials ideally will require reliable, flexible, transparent, and versatile dielectrics for transistor gate barriers, environmental passivation layers, capacitor spacers, and other device elements. Ultrathin amorphous boron nitride of thicknesses from 2 to 17 nm, described in this work, may offer these attributes, as the material is demonstrated to be universal in structure and stoichiometric chemistry on numerous substrates including flexible polydimethylsiloxane, amorphous silicon dioxide, crystalline Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, other 2D materials including graphene, 2D MoS<jats:sub>2</jats:sub>, and conducting metals and metal foils. The versatile, large area pulsed laser deposition growth technique is performed at temperatures less than 200 °C and without modifying processing conditions, allowing for seamless integration into 2D device architectures. A device‐scale dielectric constant of 5.9 ± 0.65 at 1 kHz, breakdown voltage of 9.8 ± 1.0 MV cm<jats:sup>−1</jats:sup>, and bandgap of 4.5 eV were measured for various thicknesses of the ultrathin <jats:italic>a</jats:italic>‐BN material, representing values higher than previously reported chemical vapor deposited <jats:italic>h</jats:italic>‐BN and nearing single crystal <jats:italic>h</jats:italic>‐BN.</jats:p>

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