Heat of crystallization and melting point of amorphous silicon

DOI PDF 被引用文献13件
  • E. P. Donovan
    Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
  • F. Spaepen
    Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
  • D. Turnbull
    Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
  • J. M. Poate
    Bell Laboratories, Murray Hill, New Jersey 07974
  • D. C. Jacobson
    Bell Laboratories, Murray Hill, New Jersey 07974

説明

<jats:p>Thin layers of amorphous silicon (a-Si) were produced by noble gas ion implantation of (100) substrates held at 77 K. Rutherford backscattering and channeling, and differential scanning calorimetry were used to measure the heat of crystallization, ΔHac, to be 11.9±0.7 kJ/mol, substantially less than the value predicted by scaling ΔHac of a-Ge. The crystal growth velocity is found to have the form v=v0 exp(−2.24 eV/kT). We obtain a new estimate, 1420 K, for the melting temperature of a-Si.</jats:p>

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