Low-carrier density sputtered-MoS<inf>2</inf> film by H<inf>2</inf>S annealing for normally-off accumulation-mode FET

Details 詳細情報について

• CRID

  1361981468673400448

• DOI

  10.1109/edtm.2017.7947572

• Web Site

  http://xplorestaging.ieee.org/ielx7/7939937/7947483/07947572.pdf?arnumber=7947572

• Data Source

  • Crossref