Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer

DOI DOI PDF 被引用文献17件 オープンアクセス
  • Y. M. Lee
    Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • J. Hayakawa
    Hitachi, Ltd. , Advanced Research Laboratory, 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • S. Ikeda
    Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • F. Matsukura
    Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • H. Ohno
    Tohoku University Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

書誌事項

公開日
2006-07-24
DOI
  • 10.1063/1.2234720
  • 10.48550/arxiv.cond-mat/0606503
公開者
AIP Publishing

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説明

<jats:p>We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe∕Ru∕CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta=425°C, whereas the TMR ratio of the MTJs with pinned layers without Ru spacers decreased at Ta over 325°C. Ruthenium spacers play an important role in forming a (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio through annealing at high temperatures.</jats:p>

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