Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

詳細情報 詳細情報について

• CRID

  1361981471119262848

• DOI

  10.1016/j.sse.2008.04.031

• ISSN

  00381101

• Web Site

  https://api.elsevier.com/content/article/PII:S0038110108001287?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:S0038110108001287?httpAccept=text/plain

• データソース種別

  • Crossref