Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering
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- R. Cuscó
- Consell Superior d’Investigacions Científiques (CSIC) 1 Institut Jaume Almera, , Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
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- N. Domènech-Amador
- Consell Superior d’Investigacions Científiques (CSIC) 1 Institut Jaume Almera, , Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
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- L. Artús
- Consell Superior d’Investigacions Científiques (CSIC) 1 Institut Jaume Almera, , Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
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- T. Gotschke
- Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany
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- K. Jeganathan
- Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany
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- T. Stoica
- Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany
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- R. Calarco
- Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany
説明
<jats:p>We report a Raman scattering determination of the electron density in InN nanowires from the analysis of longitudinal optical-phonon-plasmon coupled modes. A Raman peak assigned to the L− coupled mode is observed in both undoped and doped InN nanowires. This peak exhibits a shift to higher (lower) frequencies in the Si-doped (Mg-doped) nanowires and allows us to estimate the electron density in the nanowires. A significant residual electron density is found in the undoped nanowires, which increases in Si-doped nanowires and is partially compensated in Mg-doped nanowires.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 97 (22), 2010-11-29
AIP Publishing
