Intersubband absorption with different sublevel couplings in [(CdS∕ZnSe∕BeTe)∕(ZnSe∕BeTe)] double quantum wells

DOI PDF 被引用文献1件
  • G. W. Cong
    National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
  • R. Akimoto
    National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
  • K. Akita
    National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
  • T. Hasama
    National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
  • H. Ishikawa
    National Institute of Advanced Industrial Science and Technology (AIST) Ultrafast Photonic Devices Laboratory, , AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan

書誌事項

公開日
2007-04-30
DOI
  • 10.1063/1.2735930
公開者
AIP Publishing

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説明

<jats:p>The authors demonstrated the strong sublevel coupling on the intersubband absorption at telecommunication wavelengths in asymmetric II-VI double quantum wells consisting of a deep CdS well and a shallow ZnSe well coupled by a 1-monolayer-thick BeTe barrier. With increasing ZnSe well thickness, the sublevel coupling between excited states first increases to a maximum and then decreases, which results in a transition energy anticrossing and a reverse intensity evolution for e1-e2 and e1-e3 transitions. These results are in good agreement with the self-consistent Schrödinger-Poisson calculation. For optical switch applications, the sublevel-coupling-dependent relaxation time could be increased to lower the switching energy.</jats:p>

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