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- M. Kiy
- Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
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- P. Losio
- Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
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- I. Biaggio
- Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
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- M. Koehler
- Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
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- A. Tapponnier
- Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
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- P. Günter
- Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
説明
<jats:p>We show that tris (8-hydroxyquinoline) aluminum (Alq3) thin films produced and characterized under ultrahigh vacuum conditions present a well-defined squared-law dependence of the injected current on the applied voltage at applied electric fields of the order of 0.25–1 MV/cm. From this, one derives an electric-field-independent electron mobility of the order of 10−7 cm2/(V s), with a variation between different samples of about one order of magnitude. Observations of current–voltage characteristics with clear indications of trap-filling and space-charge-limited conduction at high fields in Alq3 excludes the existence of traps with an exponential distribution of trap energies, as is commonly assumed in amorphous materials.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 80 (7), 1198-1200, 2002-02-18
AIP Publishing
