Bumpless Through-Dielectrics-Silicon-Via (TDSV) Technology for Wafer-Based Three-Dimensional Integration (3DI)

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Abstract

<jats:p>This paper describes wafer-on-wafer (WOW) technology using bumpless through-dielectrics-silicon-via (TDSV) and dual-damascene interconnects for three-dimensional integration (3DI). Trends in conventional scaling compared with bumpless processes, the characteristics of devices after thinning the wafers to less than 10 um, and applications, including closed-channel-cooling systems (C3S), are discussed.</jats:p>

Journal

  • ECS Transactions

    ECS Transactions 44 (1), 827-840, 2012-03-16

    The Electrochemical Society

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