Electronic effect of Na on Cu(In,Ga)Se2 solar cells

  • Dae-Hyung Cho
    Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea
  • Kyu-Seok Lee
    Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea
  • Yong-Duck Chung
    Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea
  • Ju-Hee Kim
    Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea
  • Soo-Jeong Park
    Electronics and Telecommunications Research Institute 1 , 218 Gajeongno, Yuseong-gu, Daejeon 305-700, South Korea
  • Jeha Kim
    Research Institute of Photovoltaics, Cheongju University 3 , Cheongju 360-764, South Korea

書誌事項

公開日
2012-07-09
DOI
  • 10.1063/1.4733679
公開者
AIP Publishing

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説明

<jats:p>We report the effect of Na on the electronic properties of Cu(In,Ga)Se2 (CIGS) thin-film solar cells with a structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/SiOx/soda-lime glass (SLG). The diffusion of Na from the SLG into the CIGS layer was systematically controlled by varying the thickness of SiOx. As the Na content increased, the hole concentration of CIGS was enhanced, while the band-gap was nearly constant, which led to a lower Fermi level in the CIGS towards its valence-band edge. The Na-induced increment in the built-in potential (Vbi) across the n-(ITO/i-ZnO/CdS)/p-CIGS junction yielded an increment of open-circuit voltage that well agreed with the calculated Vbi.</jats:p>

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