Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

Details 詳細情報について

• CRID

  1362544418695776896

• DOI

  10.1088/1361-6463/aa6874

• ISSN

  13616463

  00223727

  http://id.crossref.org/issn/00223727

• Web Site

  http://iopscience.iop.org/article/10.1088/1361-6463/aa6874

  http://stacks.iop.org/0022-3727/50/i=19/a=194001/pdf

  http://stacks.iop.org/0022-3727/50/i=19/a=194001?key=crossref.55d4afa31946d908c268cde9cb3fa95b

  http://iopscience.iop.org/article/10.1088/1361-6463/aa6874/pdf

• Data Source

  • Crossref