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- B. Hoex
- Eindhoven University of Technology 1 Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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- J. Schmidt
- Institut für Solarenergieforschung Hameln/Emmerthal (ISFH) 2 , Am Ohrberg 1, D-31860 Emmerthal, Germany
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- P. Pohl
- Institut für Solarenergieforschung Hameln/Emmerthal (ISFH) 2 , Am Ohrberg 1, D-31860 Emmerthal, Germany
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- M. C. M. van de Sanden
- Eindhoven University of Technology 1 Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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- W. M. M. Kessels
- Eindhoven University of Technology 1 Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
書誌事項
- 公開日
- 2008-08-15
- DOI
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- 10.1063/1.2963707
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Thin Al2O3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different doping concentrations. The level of surface passivation in this study was determined by techniques based on photoconductance, photoluminescence, and infrared emission. Effective surface recombination velocities of 2 and 6 cm/s were obtained on 1.9 Ω cm n-type and 2.0 Ω cm p-type c-Si, respectively. An effective surface recombination velocity below 1 cm/s was unambiguously obtained for nearly intrinsic c-Si passivated by Al2O3. A high density of negative fixed charges was detected in the Al2O3 films and its impact on the level of surface passivation was demonstrated experimentally. The negative fixed charge density results in a flat injection level dependence of the effective lifetime on p-type c-Si and explains the excellent passivation of highly B-doped c-Si by Al2O3. Furthermore, a brief comparison is presented between the surface passivations achieved for thermal and plasma-assisted ALD Al2O3 films prepared in the same ALD reactor.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 104 (4), 044903-, 2008-08-15
AIP Publishing
