Electron-doped infinite-layer thin films with TC over 40 K grown on DyScO3 substrates
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- Shin-ichi Karimoto
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan
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- Michio Naito
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan
書誌事項
- 公開日
- 2004-03-22
- DOI
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- 10.1063/1.1688979
- 公開者
- AIP Publishing
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説明
<jats:p>We report high-quality electron-doped infinite-layer superconducting thin films with a TC of over 40 K grown on lattice-matched DyScO3 substrates by molecular-beam epitaxy. The optimally doped film seems to be free from strain, thus leading to a low resistivity of 75 μΩ cm at room temperature and 15 μΩ cm just above TC.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 84 (12), 2136-2138, 2004-03-22
AIP Publishing
