Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
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- Markus Hellenbrand
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
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- Elvedin Memisevic
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
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- Axel R. Persson
- Center for Analysis and Synthesis, Lund University, Box 124, 221 00 Lund, Sweden
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- Erik Lind
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
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- Saurabh Sant
- Integrated Systems Laboratory, ETH Zürich, 8092 Zürich, Switzerland
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- Andreas Schenk
- Integrated Systems Laboratory, ETH Zürich, 8092 Zürich, Switzerland
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- Lars-Erik Wernersson
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
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- Reine Wallenberg
- Center for Analysis and Synthesis, Lund University, Box 124, 221 00 Lund, Sweden
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- Johannes Svensson
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
書誌事項
- 公開日
- 2017-06-15
- DOI
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- 10.1021/acs.nanolett.7b01455
- 公開者
- American Chemical Society (ACS)
この論文をさがす
収録刊行物
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- Nano Letters
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Nano Letters 17 (7), 4373-4380, 2017-06-15
American Chemical Society (ACS)
