Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

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  • S. P. Watkins
    American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904-0060
  • G. Haacke
    American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904-0060

Abstract

<jats:p>Undoped p-type GaAs epilayers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) at 650 °C and 76 Torr using either arsine or tertiarybutylarsine (TBA), and trimethylgallium (TMG). Extremely high-purity precursors were used in order to eliminate extrinsic doping effects. Carbon acceptors from the TMG were the dominant residual electrical impurities under all growth conditions. Temperature-dependent Hall measurements were used to make a quantitative comparison of the carbon acceptor concentrations for arsine- and TBA-grown epilayers over a range of As partial pressures. For a given group V partial pressure, we report a significant reduction in carbon acceptor incorporation using TBA compared with arsine under identical growth conditions.</jats:p>

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