Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine
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- S. P. Watkins
- American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904-0060
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- G. Haacke
- American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904-0060
抄録
<jats:p>Undoped p-type GaAs epilayers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) at 650 °C and 76 Torr using either arsine or tertiarybutylarsine (TBA), and trimethylgallium (TMG). Extremely high-purity precursors were used in order to eliminate extrinsic doping effects. Carbon acceptors from the TMG were the dominant residual electrical impurities under all growth conditions. Temperature-dependent Hall measurements were used to make a quantitative comparison of the carbon acceptor concentrations for arsine- and TBA-grown epilayers over a range of As partial pressures. For a given group V partial pressure, we report a significant reduction in carbon acceptor incorporation using TBA compared with arsine under identical growth conditions.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 59 (18), 2263-2265, 1991-10-28
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1362825895933709824
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- DOI
- 10.1063/1.106064
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- ISSN
- 10773118
- 00036951
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- データソース種別
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- Crossref