Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy
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- Xin Li
- Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
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- Suresh Sundaram
- UMI 2958, Georgia Tech - CNRS, 57070 Metz, France
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- Youssef El Gmili
- UMI 2958, Georgia Tech - CNRS, 57070 Metz, France
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- Taha Ayari
- Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
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- Renaud Puybaret
- Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
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- Gilles Patriarche
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
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- Paul L. Voss
- Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
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- Jean Paul Salvestrini
- UMI 2958, Georgia Tech - CNRS, 57070 Metz, France
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- Abdallah Ougazzaden
- Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
収録刊行物
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- Crystal Growth & Design
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Crystal Growth & Design 16 (6), 3409-3415, 2016-05-13
American Chemical Society (ACS)