Traps at the SiC/SiO<sub>2</sub>-Interface

DOI Web Site 被引用文献2件

書誌事項

公開日
2000
権利情報
  • https://www.cambridge.org/core/terms
DOI
  • 10.1557/proc-640-h3.2
公開者
Springer Science and Business Media LLC

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説明

<jats:title>ABSTRACT</jats:title><jats:p>The density of interface states Dit at SiC/SiO<jats:sub>2</jats:sub> interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 640 2000

    Springer Science and Business Media LLC

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