Comparison of etching characteristics of SiO2 with ArF photoresist in C4F6 and C4F8 based dual-frequency superimposed capacitively coupled plasmas

詳細情報 詳細情報について

• CRID

  1363107368501474688

• DOI

  10.1016/j.mee.2006.10.031

• ISSN

  01679317

• Web Site

  https://api.elsevier.com/content/article/PII:S0167931706005223?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:S0167931706005223?httpAccept=text/plain

• データソース種別

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