Fabrication of thin films with highly porous microstructures

DOI PDF 被引用文献8件
  • K. Robbie
    Department of Electrical Engineering, University of Alberta, Edmonton, Alberta T6G 2G7, Canada
  • L. J. Friedrich
    Department of Electrical Engineering, University of Alberta, Edmonton, Alberta T6G 2G7, Canada
  • S. K. Dew
    Department of Electrical Engineering, University of Alberta, Edmonton, Alberta T6G 2G7, Canada
  • T. Smy
    Department of Electronics, Carleton University, Ottawa, Ontario K1S 5B6, Canada
  • M. J. Brett
    Department of Electrical Engineering, University of Alberta, Edmonton, Alberta T6G 2G7, Canada

説明

<jats:p>An evaporation process has been developed for depositing highly porous insulator or metal films with densities as low as 15% of bulk. The process utilizes either multiple evaporation sources or substrate movement to provide a symmetrical but very oblique (≳80%) flux incident on the substrate. Extreme self-shadowing produced a vertical columnar microstructure consisting of isolated and evenly spaced columns including a unique zigzag structure in a number of insulator films. Features of the film are often anisotropic, leading to conductivity differences of as much as a factor of two along perpendicular axes in the plane of the film surface. The direction of anisotropic growth was observed to switch orientation as the incident flux angle was increased to very oblique, beyond approximately 80°. A line segment simulator incorporating ballistic deposition and minimization of chemical potential has been used to aid in the understanding of the growth mechanisms of these films and to optimize the evaporation process. The simulator helped to confirm that self-shadowing was the dominant mechanism in this porous structure formation.</jats:p>

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