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- Yang Ju
- Nagoya University, Nagoya, Aichi, Japan
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- Tetsuya Kobayashi
- Tohoku University, Sendai, Miyagi, Japan
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- Hitoshi Soyama
- Tohoku University, Sendai, Miyagi, Japan
説明
<jats:p>In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.</jats:p>
収録刊行物
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- ASME 2007 InterPACK Conference, Volume 1
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ASME 2007 InterPACK Conference, Volume 1 963-966, 2007-01-01
ASMEDC
