Evidence of atomic-scale arsenic clustering in highly doped silicon

S. Duguay, F. Vurpillot, T. Philippe, E. Cadel, R. Lardé, B. Deconihout, G. Servanton, R. Pantel

doi:10.1063/1.3257178

Evidence of atomic-scale arsenic clustering in highly doped silicon

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S. Duguay

Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
F. Vurpillot

Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
T. Philippe

Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
E. Cadel

Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
R. Lardé

Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
B. Deconihout

Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
G. Servanton

STMicroelectronics 2 , 850 Rue Jean Monnet, F-38926 Crolles, France
R. Pantel

STMicroelectronics 2 , 850 Rue Jean Monnet, F-38926 Crolles, France

説明

<jats:p>Low temperature (675 °C) epitaxial in situ doped Si layers (As, 1.5 at. %) were analyzed by atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer. The spatial distribution of As atoms in this layer was obtained by APT, and the distance distribution between first nearest neighbors between As atoms was studied. The result shows that the distribution of As atoms is nonhomogeneous, indicating clustering. Those clusters, homogeneously distributed in the volume, are found to be very small (a few atoms) with a high number density and contain more than 60% of the total number of As atoms.</jats:p>